MOCVD of TiO2 thin films using a heteroleptic titanium complex: Precursor evaluation and investigation of optical, photoelectrochemical and electrical properties
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Contributors
Abstract
A new heteroleptic titanium precursor with a mixed oxygen/nitrogen coordination sphere [Ti(dmap)2(NMe2)2] (Hdmap=1-dimethylamino-2-propanol) is synthesized by a simple elimination reaction on tetrakis-dimethylaminotitanium(IV) [Ti(NMe2)4]. The compound shows encouraging results in terms of chemical and thermal stability compared to the parent alkyl amide [Ti(NMe2)4], and is therefore more suitable for MOCVD applications. TiO2 thin films are grown on Si(100) and ITO-coated borosilicate glass substrates via MOCVD in the temperature range 500-800°C. The deposition temperature has a significant effect on the phase and microstructure of the TiO2 films obtained, which influences the functional properties. The optical bandgaps of the films are in the range 2.92-3.36eV. The best photocurrent response (1.5mAcm-2 under AM 1.5G conditions) in aqueous electrolytes is observed for films grown at 700°C having improved crystallinity and porous columnar structure.
Details
Original language | English |
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Pages (from-to) | 224-233 |
Number of pages | 10 |
Journal | Chemical Vapor Deposition |
Volume | 20 |
Issue number | 7-9 |
Publication status | Published - 1 Sept 2014 |
Peer-reviewed | Yes |
Externally published | Yes |
Keywords
ASJC Scopus subject areas
Keywords
- MOCVD, optical bandgap, photoelectrochemical properties, TiO thin films, [Ti(dmap)(NMe)]