Method for Modifying Substrates Based on Crystal Lattice Dislocation Density
Research output: Intellectual property › Patent application/Patent
Contributors
- Siltectra GmbH
Abstract
A method includes: providing a semiconductor body having a generation plane and crystal lattice planes which intersect the generation plane at intersecting lines; generating modifications in the semiconductor body by multiphoton excitation and which are spaced apart from one another, the modifications altering a physical property of the semiconductor body so as to form subcritical cracks in the generation plane; and separating a solid-state layer from the semiconductor body by connecting the subcritical cracks in the generation plane.
Details
A method includes: providing a semiconductor body having a generation plane and crystal lattice planes which intersect the generation plane at intersecting lines; generating modifications in the semiconductor body by multiphoton excitation and which are spaced apart from one another, the modifications altering a physical property of the semiconductor body so as to form subcritical cracks in the generation plane; and separating a solid-state layer from the semiconductor body by connecting the subcritical cracks in the generation plane.
| Original language | English |
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| IPC (International Patent Classification) | H01L 21/ 78 A I |
| Patent number | US2020051831 |
| Filing date | 6 Aug 2019 |
| Country/Territory | United States of America |
| Priority date | 7 Aug 2018 |
| Priority number | DE20181006238 |
| Publication status | Published - 13 Feb 2020 |
| Externally published | Yes |
External IDs
| ORCID | /0000-0003-2572-1149/work/208796506 |
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