Interface reconstruction in V-oxide heterostructures determined by x-ray absorption spectroscopy
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
We present an x-ray absorption study of the dependence of the V oxidation state on the thickness of LaV O3 (LVO) and capping LaAl O3 (LAO) layers in the multilayer structure of LVO sandwiched between LAO. We found that the change of the valence of V as a function of LAO layer thickness can be qualitatively explained by a transition between electronically reconstructed interfaces and a chemical reconstruction. The change as a function of LVO layer thickness is complicated by the presence of a considerable amount of V4+ in the bulk of the thicker LVO layers.
Details
Original language | English |
---|---|
Article number | 023115 |
Journal | Applied physics letters |
Volume | 95 |
Issue number | 2 |
Publication status | Published - 2009 |
Peer-reviewed | Yes |
External IDs
ORCID | /0000-0002-2438-0672/work/159172186 |
---|