Interface reconstruction in V-oxide heterostructures determined by x-ray absorption spectroscopy

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

  • H. Wadati - , University of British Columbia (Autor:in)
  • D. G. Hawthorn - , University of British Columbia, University of Waterloo (Autor:in)
  • J. Geck - , Professur für Physik der Quantenmaterialien, University of British Columbia (Autor:in)
  • T. Z. Regier - , University of Saskatchewan (Autor:in)
  • R. I.R. Blyth - , University of Saskatchewan (Autor:in)
  • T. Higuchi - , The University of Tokyo (Autor:in)
  • Y. Hotta - , The University of Tokyo (Autor:in)
  • Y. Hikita - , The University of Tokyo (Autor:in)
  • H. Y. Hwang - , The University of Tokyo, Japan Science and Technology Agency (Autor:in)
  • G. A. Sawatzky - , University of British Columbia (Autor:in)

Abstract

We present an x-ray absorption study of the dependence of the V oxidation state on the thickness of LaV O3 (LVO) and capping LaAl O3 (LAO) layers in the multilayer structure of LVO sandwiched between LAO. We found that the change of the valence of V as a function of LAO layer thickness can be qualitatively explained by a transition between electronically reconstructed interfaces and a chemical reconstruction. The change as a function of LVO layer thickness is complicated by the presence of a considerable amount of V4+ in the bulk of the thicker LVO layers.

Details

OriginalspracheEnglisch
Aufsatznummer023115
FachzeitschriftApplied physics letters
Jahrgang95
Ausgabenummer2
PublikationsstatusVeröffentlicht - 2009
Peer-Review-StatusJa

Externe IDs

ORCID /0000-0002-2438-0672/work/159172186

Schlagworte

ASJC Scopus Sachgebiete