Insights into the Temperature-Dependent Switching Behavior of Three-Gated Reconfigurable Field-Effect Transistors

Research output: Contribution to journalResearch articleContributedpeer-review



Three-gated reconfigurable field-effect transistors are innovative nanoelectronic devices that are rapidly and increasingly attracting substantial interest in several fields of application thanks to their inherent n/p-type reconfiguration capabilities. For this reason, it is of significant importance to acquire a deeper knowledge about the temperature ranges in which such devices can be operated and, at the same time, gather a better understanding of the physical mechanisms that are involved in their operation. To achieve this aim, in-depth observations about the functioning of such devices in an ultrawide temperature range, spanning from 80 to 475 K, are performed and are presented for their ambipolar and (Formula presented.) operation modes. In view of the data exhibited herein, it is possible to assess the performances of three-gated reconfigurable field-effect transistors within a considerable temperature span and finally provide significant insights on the temperature-dependent physical mechanisms regulating their functionality.


Original languageEnglish
Article number2300019
Number of pages9
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number13
Publication statusPublished - 21 Apr 2023

External IDs

WOS 000971567400001
ORCID /0000-0003-3814-0378/work/142256352


DFG Classification of Subject Areas according to Review Boards

Subject groups, research areas, subject areas according to Destatis


  • cryogenic electronics, high temperature, low temperature, reconfigurable field-effect transistors (RFETs), Schottky barrier, Cryogenic electronics, High temperature, Low temperature

Library keywords