Influence of co-implantation on the activation and diffusion of ultra-shallow extension implantation

Research output: Contribution to journalConference articleContributedpeer-review

Contributors

  • Marc Herden - , Global Foundries, Inc. (Author)
  • Daniel Gehre - , Global Foundries, Inc. (Author)
  • Thomas Feudel - , Global Foundries, Inc. (Author)
  • Andy Wei - , Global Foundries, Inc. (Author)
  • Massimo Bersani - , Fondazione Bruno Kessler (Author)
  • Giovanni Mannino - , National Research Council of Italy (CNR) (Author)
  • Jaap V.D. Berg - , University of Salford (Author)

Abstract

Scaling options for S/D extension junctions of MOS transistors by anneal temperature variation or by application of co-implantation were investigated. Blank wafer and test structure experiments showed that the main contribution to reduce junction depth and to fulfill the requirements of downscaled devices was temperature reduction. The implementation of co-implantation of F, C or N or of pre-amorphization provided another degree of junction depth variation. For p+n-junctions suppression of B diffusion was found from SIMS measurements when the parameters of the co-implantation were optimized to the dopant implantation. Also the use of different species for pre-amorphization influenced the electrical junction characteristics, shown by SRP. For As implanted n+p-junctions a variation in electrical junction depth was observed that is related to the species implanted prior to the As dopant implantation.

Details

Original languageEnglish
Pages (from-to)203-207
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume237
Issue number1-2
Publication statusPublished - Aug 2005
Peer-reviewedYes
Externally publishedYes

Conference

Title2004 15th International Conference on Ion Implantation Technology
Abbreviated titleIIT 2004
Conference number15
Duration25 - 27 October 2004
CityTaipei
CountryTaiwan, Province of China

Keywords

Keywords

  • Diffusion, Ion implantation, Ultra shallow junctions