Influence of co-implantation on the activation and diffusion of ultra-shallow extension implantation

Publikation: Beitrag in FachzeitschriftKonferenzartikelBeigetragenBegutachtung

Beitragende

  • Marc Herden - , Global Foundries, Inc. (Autor:in)
  • Daniel Gehre - , Global Foundries, Inc. (Autor:in)
  • Thomas Feudel - , Global Foundries, Inc. (Autor:in)
  • Andy Wei - , Global Foundries, Inc. (Autor:in)
  • Massimo Bersani - , Fondazione Bruno Kessler (Autor:in)
  • Giovanni Mannino - , National Research Council of Italy (CNR) (Autor:in)
  • Jaap V.D. Berg - , University of Salford (Autor:in)

Abstract

Scaling options for S/D extension junctions of MOS transistors by anneal temperature variation or by application of co-implantation were investigated. Blank wafer and test structure experiments showed that the main contribution to reduce junction depth and to fulfill the requirements of downscaled devices was temperature reduction. The implementation of co-implantation of F, C or N or of pre-amorphization provided another degree of junction depth variation. For p+n-junctions suppression of B diffusion was found from SIMS measurements when the parameters of the co-implantation were optimized to the dopant implantation. Also the use of different species for pre-amorphization influenced the electrical junction characteristics, shown by SRP. For As implanted n+p-junctions a variation in electrical junction depth was observed that is related to the species implanted prior to the As dopant implantation.

Details

OriginalspracheEnglisch
Seiten (von - bis)203-207
Seitenumfang5
FachzeitschriftNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Jahrgang237
Ausgabenummer1-2
PublikationsstatusVeröffentlicht - Aug. 2005
Peer-Review-StatusJa
Extern publiziertJa

Konferenz

Titel2004 15th International Conference on Ion Implantation Technology
KurztitelIIT 2004
Veranstaltungsnummer15
Dauer25 - 27 Oktober 2004
StadtTaipei
LandTaiwan

Schlagworte

Schlagwörter

  • Diffusion, Ion implantation, Ultra shallow junctions