Implementation of 4H-SiC pin-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration

Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review

Contributors

  • Christian D. Matthus - , Chair of Circuit Design and Network Theory, Friedrich-Alexander University Erlangen-Nürnberg (Author)
  • Tobias Erlbacher - , Fraunhofer Institute for Integrated Systems and Device Technology (Author)
  • Bernhard Schöfer - , Friedrich-Alexander University Erlangen-Nürnberg (Author)
  • Anton J. Bauer - , Fraunhofer Institute for Integrated Systems and Device Technology (Author)
  • Lothar Frey - , Friedrich-Alexander University Erlangen-Nürnberg (Author)

Abstract

The usability of 4H-SiC pin-diodes as nearly linear temperature sensors up to 800 K is demonstrated. Two sensor concepts were evaluated including the constant current forward bias (CCFB) concept and the integrated proportional to absolute temperature (PTAT) concept. The maximum sensitivity was 4.5 mV/K for the CCFB and an applied current density of 118 nA/cm2. Additionally, this device can be used for UV detection, too, demonstrating the feasibility of 4H-SiC multi-sensor integration.

Details

Original languageGerman
Title of host publication2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-1
Number of pages1
ISBN (print)978-1-5090-2614-2
Publication statusPublished - 29 Sept 2016
Peer-reviewedYes

Conference

Title2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)
Duration25 - 29 September 2016
LocationHalkidiki, Greece

External IDs

Scopus 85019997300

Keywords

Keywords

  • Temperature measurement, Temperature sensors, Semiconductor device measurement, Semiconductor diodes, Sensitivity, Current density, Voltage measurement