Implementation of 4H-SiC pin-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
The usability of 4H-SiC pin-diodes as nearly linear temperature sensors up to 800 K is demonstrated. Two sensor concepts were evaluated including the constant current forward bias (CCFB) concept and the integrated proportional to absolute temperature (PTAT) concept. The maximum sensitivity was 4.5 mV/K for the CCFB and an applied current density of 118 nA/cm2. Additionally, this device can be used for UV detection, too, demonstrating the feasibility of 4H-SiC multi-sensor integration.
Details
Originalsprache | Deutsch |
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Titel | 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) |
Herausgeber (Verlag) | IEEE |
Seiten | 1-1 |
Seitenumfang | 1 |
ISBN (Print) | 978-1-5090-2614-2 |
Publikationsstatus | Veröffentlicht - 29 Sept. 2016 |
Peer-Review-Status | Ja |
Konferenz
Titel | 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) |
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Dauer | 25 - 29 September 2016 |
Ort | Halkidiki, Greece |
Externe IDs
Scopus | 85019997300 |
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Schlagworte
Schlagwörter
- Temperature measurement, Temperature sensors, Semiconductor device measurement, Semiconductor diodes, Sensitivity, Current density, Voltage measurement