Implementation of 4H-SiC pin-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/GutachtenBeitrag in KonferenzbandBeigetragenBegutachtung

Beitragende

  • Christian D. Matthus - , Professur für Schaltungstechnik und Netzwerktheorie, Friedrich-Alexander-Universität Erlangen-Nürnberg (Autor:in)
  • Tobias Erlbacher - , Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (Autor:in)
  • Bernhard Schöfer - , Friedrich-Alexander-Universität Erlangen-Nürnberg (Autor:in)
  • Anton J. Bauer - , Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (Autor:in)
  • Lothar Frey - , Friedrich-Alexander-Universität Erlangen-Nürnberg (Autor:in)

Abstract

The usability of 4H-SiC pin-diodes as nearly linear temperature sensors up to 800 K is demonstrated. Two sensor concepts were evaluated including the constant current forward bias (CCFB) concept and the integrated proportional to absolute temperature (PTAT) concept. The maximum sensitivity was 4.5 mV/K for the CCFB and an applied current density of 118 nA/cm2. Additionally, this device can be used for UV detection, too, demonstrating the feasibility of 4H-SiC multi-sensor integration.

Details

OriginalspracheDeutsch
Titel2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)
Herausgeber (Verlag)IEEE
Seiten1-1
Seitenumfang1
ISBN (Print)978-1-5090-2614-2
PublikationsstatusVeröffentlicht - 29 Sept. 2016
Peer-Review-StatusJa

Konferenz

Titel2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)
Dauer25 - 29 September 2016
OrtHalkidiki, Greece

Externe IDs

Scopus 85019997300

Schlagworte

Schlagwörter

  • Temperature measurement, Temperature sensors, Semiconductor device measurement, Semiconductor diodes, Sensitivity, Current density, Voltage measurement