Impact of rapid thermal annealing and hydrogenation on the doping concentration and carrier mobility in solid phase crystallized poly-Si thin Films

Research output: Contribution to book/conference proceedings/anthology/reportConference contributionContributedpeer-review

Contributors

  • A. Kumar - , Solar Energy Research Institute of Singapore, National University of Singapore (Author)
  • P. I. Widenborg - , National University of Singapore (Author)
  • H. Hidayat - , National University of Singapore (Author)
  • Zixuan Qiu - , National University of Singapore (Author)
  • A. G. Aberie - , National University of Singapore (Author)

Abstract

The effect of the rapid thermal annealing (RTA) and hydrogenation step on the electronic properties of the n + and p + solid phase crystallized (SPC) poly-crystalline silicon (poly-Si) thin films was investigated using Hall effect measurements and four-point-probe measurements. Both the RTA and hydrogenation step were found to affect the electronic properties of doped poly-Si thin films. The RTA step was found to have the largest impact on the dopant activation and majority carrier mobility of the p + SPC poly-Si thin films. A very high Hall mobility of 71 cm 2/Vs for n + poly-Si and 35 cm 2/Vs for p + poly-Si at the carrier concentration of 2×10 19 cm -3 and 4.5×10 19 cm -3, respectively, were obtained.

Details

Original languageEnglish
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011
Pages173-178
Number of pages6
Publication statusPublished - 2012
Peer-reviewedYes
Externally publishedYes

Publication series

SeriesMaterials Research Society Symposium Proceedings
Volume1321
ISSN0272-9172

Conference

Title2011 MRS Spring Meeting
Duration25 - 29 April 2011
CitySan Francisco, CA
CountryUnited States of America