The effect of the rapid thermal annealing (RTA) and hydrogenation step on the electronic properties of the n ⁺ and p ⁺ solid phase crystallized (SPC) poly-crystalline silicon (poly-Si) thin films was investigated using Hall effect measurements and four-point-probe measurements. Both the RTA and hydrogenation step were found to affect the electronic properties of doped poly-Si thin films. The RTA step was found to have the largest impact on the dopant activation and majority carrier mobility of the p ⁺ SPC poly-Si thin films. A very high Hall mobility of 71 cm ²/Vs for n ⁺ poly-Si and 35 cm ²/Vs for p ⁺ poly-Si at the carrier concentration of 2×10 ¹⁹ cm ^-3 and 4.5×10 ¹⁹ cm ^-3, respectively, were obtained.