Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

  • A. P. Graham - (Author)
  • S. Knebel - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • T. Melde - (Author)
  • T. Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • J. Muller - (Author)
  • U. Schroder - (Author)
  • J. Sundqvist - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Ekaterina Yurchuk - (Author)

Details

Original languageEnglish
Pages (from-to)88-92
JournalThin solid films
Volume533
Publication statusPublished - 2013
Peer-reviewedYes

External IDs

Scopus 84879890335

Keywords

Library keywords