In this study, we examine the performance of the Hf_0.5Zr_0.5O₂/Y₂O₃ bilayer ferroelectric tunnel junction under both unipolar and bipolar stress conditions. The introduction of a delay time between consecutive pulses clarified the role of charge traps and defect formation in modulating the tunneling current of the device. In the context of unipolar stress pulses, the dynamics of electron trapping and detrapping are essential for the accumulation of charges at the ferroelectric/dielectric interfaces. In addition to the inherent polarity of these trapped charges, the duration between consecutive pulses plays a crucial role in determining the extent of trap filling at these interfaces. This, in turn, critically influences the On to Off ratio, either by diminishing or enhancing it. When the device was subjected to alternating positive and negative switching pulses, defect formation occurred within the device stack. This results in a significant enhancement of the On and Off currents, increasing by more than two orders of magnitude. By appropriately engineering the delay interval between the alternating pulses, we observed an On to Off ratio exceeding 100, indicating that the contribution of trapped charges is the primary cause of current modulation over field cycles.