Impact of carbon junction implant on leakage currents and defect distribution: Measurement and simulation
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
In this paper we present a detailed investigation on the influence of carbon co-implantation in the source/drain extension on the leakage current and defect density in PFET transistors. Carbon is used to reduce the transient enhanced boron diffusion, to decrease short channel effects and to control the overlap length of the transistor. The leakage currents are measured and separated in order to analyze the influence of the carbon on the different MOSFET regions. The carbon implantation dose is varied between 3.5 × 1014 atm/cm2 and 4 × 1014 atm/cm 2. This small increase in implantation dose leads to an enhanced source/drain extension leakage which is caused by carbon induced defects. No effect of the carbon implantation on the source/drain junction leakage was found as the co-implant is located above the source/drain depletion region. In addition an increase of the gate induced drain leakage with carbon dose was observed.
Details
Original language | English |
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Pages (from-to) | 170-176 |
Number of pages | 7 |
Journal | Solid-state electronics |
Volume | 65-66 |
Issue number | 1 |
Publication status | Published - Nov 2011 |
Peer-reviewed | Yes |
External IDs
ORCID | /0000-0003-3814-0378/work/156338407 |
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Keywords
ASJC Scopus subject areas
Keywords
- Carbon, Defect distribution, Leakage current, PFET