How to make DRAM non-volatile? Anti-ferroelectrics: A new paradigm for universal memories

Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review

Contributors

Details

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
Publication statusPublished - 2017
Peer-reviewedYes

External IDs

Scopus 85014468978

Keywords