High-Performance CNT-Based FETs on 200 mm Si Wafers With Low Drift and aM-Level Biosensing Sensitivity
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
Carbon nanotube (CNT) based ion-sensitive FETs (ISFETs) and biosensor FETs (BioFETs) provide scalable solutions for liquid electrochemical sensing. We present fab-compatible CNT-ISFETs fabricated on 200 mm wafers and evaluated under electrolyte gating, showing consistent threshold voltage (V th) (0.45 ± 0.06) V, low gate leakage (10 -9A), <10% on-current drift over 7 h, and <20% variation in key electrical parameters such as on-current, transconductance, threshold voltage, and subthreshold swing, demonstrating good deposition uniformity. After 3-Aminopropyltriethoxysilane functionalization, BioFETs exhibit I on/I off > 10 4, a narrow V th (0.31 ± 0.02) V, and a subthreshold swing of (101 ± 4) mV/dec, meeting relevant performance criteria. Upon functionalization for DNA sensing, our BioFETs achieve responsivities of >300% for 100 aM target DNA and ΔV th ∼ 80 mV, marking the first instance of such low detection in label-free, non-nanoparticle-assisted CNT-FET biosensors.
Details
| Original language | English |
|---|---|
| Article number | 4502904 |
| Pages (from-to) | 1-4 |
| Journal | IEEE Sensors Letters |
| Volume | 9 |
| Issue number | 10 |
| Early online date | 22 Sept 2025 |
| Publication status | Published - Oct 2025 |
| Peer-reviewed | Yes |
Keywords
ASJC Scopus subject areas
Keywords
- Chemical and biological sensors, DNA sensor, biosensor, biosensor FET (BioFET), carbon nanotube field-effect transistor (CNT-FET), ion-sensitive FET (ISFET)