High-Performance CNT-Based FETs on 200 mm Si Wafers With Low Drift and aM-Level Biosensing Sensitivity
Publikation: Beitrag in Fachzeitschrift › Forschungsartikel › Beigetragen › Begutachtung
Abstract
Carbon nanotube (CNT) based ion-sensitive FETs (ISFETs) and biosensor FETs (BioFETs) provide scalable solutions for liquid electrochemical sensing. We present fab-compatible CNT-ISFETs fabricated on 200 mm wafers and evaluated under electrolyte gating, showing consistent threshold voltage (V th) (0.45 ± 0.06) V, low gate leakage (10 -9A), <10% on-current drift over 7 h, and <20% variation in key electrical parameters such as on-current, transconductance, threshold voltage, and subthreshold swing, demonstrating good deposition uniformity. After 3-Aminopropyltriethoxysilane functionalization, BioFETs exhibit I on/I off > 10 4, a narrow V th (0.31 ± 0.02) V, and a subthreshold swing of (101 ± 4) mV/dec, meeting relevant performance criteria. Upon functionalization for DNA sensing, our BioFETs achieve responsivities of >300% for 100 aM target DNA and ΔV th ∼ 80 mV, marking the first instance of such low detection in label-free, non-nanoparticle-assisted CNT-FET biosensors.
Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 4502904 |
| Seiten (von - bis) | 1-4 |
| Fachzeitschrift | IEEE Sensors Letters |
| Jahrgang | 9 |
| Ausgabenummer | 10 |
| Frühes Online-Datum | 22 Sept. 2025 |
| Publikationsstatus | Veröffentlicht - Okt. 2025 |
| Peer-Review-Status | Ja |
Schlagworte
ASJC Scopus Sachgebiete
Schlagwörter
- Chemical and biological sensors, DNA sensor, biosensor, biosensor FET (BioFET), carbon nanotube field-effect transistor (CNT-FET), ion-sensitive FET (ISFET)