High-Performance 2D p-Type Transistors Based on GaSe Layers: An Ab Initio Study

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

  • Agnieszka Kuc - , Leipzig University, Jacobs University Bremen (Author)
  • Teresa Cusati - , University of Pisa (Author)
  • Elias Dib - , University of Pisa (Author)
  • Augusto F. Oliveira - , Leipzig University, Jacobs University Bremen (Author)
  • Alessandro Fortunelli - , National Research Council of Italy (Author)
  • Giuseppe Iannaccone - , University of Pisa (Author)
  • Thomas Heine - , Leipzig University, Jacobs University Bremen (Author)
  • Gianluca Fiori - , University of Pisa (Author)

Details

Original languageEnglish
Article number1600399
JournalAdvanced electronic materials
Volume3
Issue number2
Publication statusPublished - 1 Feb 2017
Peer-reviewedYes
Externally publishedYes

Keywords

ASJC Scopus subject areas

Keywords

  • density functional theory, device, GaSe monolayer, transport properties, ultrashort channel

Library keywords