Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

  • Fabio Isa - , ETH Zurich (Author)
  • Marco Salvalaglio - , University of Milan - Bicocca (Author)
  • Yadira Arroyo Rojas Dasilva - , Swiss Federal Laboratories for Materials Science and Technology (Empa) (Author)
  • Mojmir Meduna - , Masaryk University (Author)
  • Michael Barget - , University of Milan - Bicocca (Author)
  • Arik Jung - , ETH Zurich (Author)
  • Thomas Kreiliger - , ETH Zurich (Author)
  • Giovanni Isella - , Polytechnic University of Milan (Author)
  • Rolf Erni - , Swiss Federal Laboratories for Materials Science and Technology (Empa) (Author)
  • Fabio Pezzoli - , University of Milan - Bicocca (Author)
  • Emiliano Bonera - , University of Milan - Bicocca (Author)
  • Philippe Niedermann - , Swiss Center for Electronics and Microtechnology (CSEM) (Author)
  • Pierangelo Groening - , Swiss Federal Laboratories for Materials Science and Technology (Empa) (Author)
  • Francesco Montalenti - , University of Milan - Bicocca (Author)
  • Hans von Kaenel - , ETH Zurich (Author)

Details

Original languageEnglish
Pages (from-to)884-888
Number of pages5
JournalAdvanced materials
Volume28
Issue number5
Publication statusPublished - 3 Feb 2016
Peer-reviewedYes
Externally publishedYes

External IDs

Scopus 84956600902
ORCID /0000-0002-4217-0951/work/142237439

Keywords

Keywords

  • heteroepitaxy, heterostructures, strain relaxation, SiGe, substrate patterning, EPITAXIAL-GROWTH, LAYERS, HETEROEPITAXY, NANOHETEROEPITAXY, DENSITIES, GAN, GE