Herstellungsmethode für einen vertikalen organischen Feldeffekttransistor und ein vertikaler organischer Feldeffekttransistor
Research output: Intellectual Property › Patent application/Patent
Contributors
- Technische Universität Dresden
- Novaled GmbH
- TUD Dresden University of Technology
Abstract
The invention relates to a method for producing an organic field effect transistor, the method comprising steps of providing a gate electrode (1) and a gate insulator (2) assigned to the gate electrode (1) for electrical insulation on a substrate, depositing a first organic semiconducting layer (3) on the gate insulator (2), generating a first electrode (4) and an electrode insulator (5) assigned to the first electrode (4) for electrical insulation on the first organic semiconducting layer (3), depositing a second organic semiconducting layer (6) on the first organic semiconducting layer (3) and the electrode insulator (5), and generating a second electrode (7) on the second organic semiconducting layer (6), wherein at least one of the step of generating the first electrode (4) and the electrode insulator (5) on the first organic semiconducting layer (3) and the step of generating the second electrode (7) on the second organic semiconducting layer (6) comprises a step of photo-lithographic structuring on the first and the second organic semiconducting layer (3, 6), respectively. Furthermore, the invention relates to an organic field effect transistor and an electronic switching device.
| Translated title of the contribution | A method for producing a vertical organic field effect transistor and a vertical organic field effect transistor |
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Details
The invention relates to a method for producing an organic field effect transistor, the method comprising steps of providing a gate electrode (1) and a gate insulator (2) assigned to the gate electrode (1) for electrical insulation on a substrate, depositing a first organic semiconducting layer (3) on the gate insulator (2), generating a first electrode (4) and an electrode insulator (5) assigned to the first electrode (4) for electrical insulation on the first organic semiconducting layer (3), depositing a second organic semiconducting layer (6) on the first organic semiconducting layer (3) and the electrode insulator (5), and generating a second electrode (7) on the second organic semiconducting layer (6), wherein at least one of the step of generating the first electrode (4) and the electrode insulator (5) on the first organic semiconducting layer (3) and the step of generating the second electrode (7) on the second organic semiconducting layer (6) comprises a step of photo-lithographic structuring on the first and the second organic semiconducting layer (3, 6), respectively. Furthermore, the invention relates to an organic field effect transistor and an electronic switching device.
| Original language | German |
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| IPC (International Patent Classification) | H01L 51/ 10 A I |
| Patent number | EP2648239 |
| Country/Territory | Germany |
| Priority date | 5 Apr 2012 |
| Priority number | EP20120163473 |
| Publication status | Published - 9 Oct 2013 |
External IDs
| ORCID | /0000-0002-9773-6676/work/142659841 |
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