Herstellungsmethode für einen vertikalen organischen Feldeffekttransistor und ein vertikaler organischer Feldeffekttransistor

Research output: Intellectual propertyPatent application/Patent

Contributors

Abstract

The invention relates to a method for producing an organic field effect transistor, the method comprising steps of providing a gate electrode (1) and a gate insulator (2) assigned to the gate electrode (1) for electrical insulation on a substrate, depositing a first organic semiconducting layer (3) on the gate insulator (2), generating a first electrode (4) and an electrode insulator (5) assigned to the first electrode (4) for electrical insulation on the first organic semiconducting layer (3), depositing a second organic semiconducting layer (6) on the first organic semiconducting layer (3) and the electrode insulator (5), and generating a second electrode (7) on the second organic semiconducting layer (6), wherein at least one of the step of generating the first electrode (4) and the electrode insulator (5) on the first organic semiconducting layer (3) and the step of generating the second electrode (7) on the second organic semiconducting layer (6) comprises a step of photo-lithographic structuring on the first and the second organic semiconducting layer (3, 6), respectively. Furthermore, the invention relates to an organic field effect transistor and an electronic switching device.

Translated title of the contribution
A method for producing a vertical organic field effect transistor and a vertical organic field effect transistor

Details

The invention relates to a method for producing an organic field effect transistor, the method comprising steps of providing a gate electrode (1) and a gate insulator (2) assigned to the gate electrode (1) for electrical insulation on a substrate, depositing a first organic semiconducting layer (3) on the gate insulator (2), generating a first electrode (4) and an electrode insulator (5) assigned to the first electrode (4) for electrical insulation on the first organic semiconducting layer (3), depositing a second organic semiconducting layer (6) on the first organic semiconducting layer (3) and the electrode insulator (5), and generating a second electrode (7) on the second organic semiconducting layer (6), wherein at least one of the step of generating the first electrode (4) and the electrode insulator (5) on the first organic semiconducting layer (3) and the step of generating the second electrode (7) on the second organic semiconducting layer (6) comprises a step of photo-lithographic structuring on the first and the second organic semiconducting layer (3, 6), respectively. Furthermore, the invention relates to an organic field effect transistor and an electronic switching device.

Original languageGerman
IPC (International Patent Classification)H01L 51/ 10 A I
Patent numberEP2648239
Country/TerritoryGermany
Priority date5 Apr 2012
Priority numberEP20120163473
Publication statusPublished - 9 Oct 2013
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External IDs

ORCID /0000-0002-9773-6676/work/142659841