Herstellungsmethode für einen vertikalen organischen Feldeffekttransistor und ein vertikaler organischer Feldeffekttransistor

Publikation: Geistiges EigentumPatentanmeldung/Patent

Beitragende

Abstract

The invention relates to a method for producing an organic field effect transistor, the method comprising steps of providing a gate electrode (1) and a gate insulator (2) assigned to the gate electrode (1) for electrical insulation on a substrate, depositing a first organic semiconducting layer (3) on the gate insulator (2), generating a first electrode (4) and an electrode insulator (5) assigned to the first electrode (4) for electrical insulation on the first organic semiconducting layer (3), depositing a second organic semiconducting layer (6) on the first organic semiconducting layer (3) and the electrode insulator (5), and generating a second electrode (7) on the second organic semiconducting layer (6), wherein at least one of the step of generating the first electrode (4) and the electrode insulator (5) on the first organic semiconducting layer (3) and the step of generating the second electrode (7) on the second organic semiconducting layer (6) comprises a step of photo-lithographic structuring on the first and the second organic semiconducting layer (3, 6), respectively. Furthermore, the invention relates to an organic field effect transistor and an electronic switching device.

Details

The invention relates to a method for producing an organic field effect transistor, the method comprising steps of providing a gate electrode (1) and a gate insulator (2) assigned to the gate electrode (1) for electrical insulation on a substrate, depositing a first organic semiconducting layer (3) on the gate insulator (2), generating a first electrode (4) and an electrode insulator (5) assigned to the first electrode (4) for electrical insulation on the first organic semiconducting layer (3), depositing a second organic semiconducting layer (6) on the first organic semiconducting layer (3) and the electrode insulator (5), and generating a second electrode (7) on the second organic semiconducting layer (6), wherein at least one of the step of generating the first electrode (4) and the electrode insulator (5) on the first organic semiconducting layer (3) and the step of generating the second electrode (7) on the second organic semiconducting layer (6) comprises a step of photo-lithographic structuring on the first and the second organic semiconducting layer (3, 6), respectively. Furthermore, the invention relates to an organic field effect transistor and an electronic switching device.

OriginalspracheDeutsch
IPC (Internationale Patentklassifikation)H01L 51/ 10 A I
VeröffentlichungsnummerEP2648239
Land/GebietDeutschland
Prioritätsdatum5 Apr. 2012
PrioritätsnummerEP20120163473
PublikationsstatusVeröffentlicht - 9 Okt. 2013
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Externe IDs

ORCID /0000-0002-9773-6676/work/142659841