Hafnia-Based Double-Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

Details

Original languageEnglish
Pages (from-to)4023-4033
JournalACS applied electronic materials
Volume2
Issue number12
Publication statusPublished - 22 Dec 2020
Peer-reviewedYes

External IDs

Scopus 85097957346
ORCID /0000-0003-3814-0378/work/142256126

Keywords

Keywords

  • ferroelectrics, hafnium zirconium oxide, ferroelectric tunnel junction, neuromorphic computing, synapse, STDP