Frequency Dependent Bistability in a Volatile Threshold Switch

Research output: Contribution to book/conference proceedings/anthology/reportConference contributionContributedpeer-review

Contributors

Abstract

The theoretical study performed in this paper demonstrates that the NbO2-Mott memristor considered here could exhibit two distinct steady-state responses when stimulated by a sinusoidal current input of suitable amplitude, provided the input frequency is sufficiently high. By utilizing methods from circuit theory, this work establishes a link between the two possible dynamical regimes observed in this nanodevice, under the assumed simulation settings hereby, and a versatile dynamical phenomenon it exhibits, known as local fading memory. The mechanisms driving local fading memory in the high frequency limit are investigated here analytically. This feature of the NbO2-Mott memristor, revealed through our analyses, if further validated through experimental studies, could further enhance the already established versatility of this device and may be exploited in suitable practical applications.

Details

Original languageEnglish
Title of host publication2024 13th International Conference on Modern Circuits and Systems Technologies, MOCAST 2024 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
ISBN (electronic)9798350385427
Publication statusPublished - 2024
Peer-reviewedYes

Publication series

SeriesInternational Conference on Modern Circuits and Systems Technologies (MOCAST)

Conference

Title13th International Conference on Modern Circuits and Systems Technologies
Abbreviated titleMOCAST 2024
Conference number13
Duration26 - 28 June 2024
Website
Degree of recognitionInternational event
LocationTechnical University of Sofia
CitySofia
CountryBulgaria

External IDs

ORCID /0000-0001-7436-0103/work/168716648
ORCID /0000-0002-1236-1300/work/168717348
ORCID /0000-0002-2367-5567/work/168720272
ORCID /0000-0002-6200-4707/work/168720685

Keywords

Keywords

  • bistability, fading memory, high frequency, threshold switch, Volatile memristor