Frequency Dependent Bistability in a Volatile Threshold Switch
Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review
Contributors
Abstract
The theoretical study performed in this paper demonstrates that the NbO2-Mott memristor considered here could exhibit two distinct steady-state responses when stimulated by a sinusoidal current input of suitable amplitude, provided the input frequency is sufficiently high. By utilizing methods from circuit theory, this work establishes a link between the two possible dynamical regimes observed in this nanodevice, under the assumed simulation settings hereby, and a versatile dynamical phenomenon it exhibits, known as local fading memory. The mechanisms driving local fading memory in the high frequency limit are investigated here analytically. This feature of the NbO2-Mott memristor, revealed through our analyses, if further validated through experimental studies, could further enhance the already established versatility of this device and may be exploited in suitable practical applications.
Details
Original language | English |
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Title of host publication | 2024 13th International Conference on Modern Circuits and Systems Technologies, MOCAST 2024 - Proceedings |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 1-4 |
ISBN (electronic) | 9798350385427 |
Publication status | Published - 2024 |
Peer-reviewed | Yes |
Publication series
Series | International Conference on Modern Circuits and Systems Technologies (MOCAST) |
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Conference
Title | 13th International Conference on Modern Circuits and Systems Technologies |
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Abbreviated title | MOCAST 2024 |
Conference number | 13 |
Duration | 26 - 28 June 2024 |
Website | |
Degree of recognition | International event |
Location | Technical University of Sofia |
City | Sofia |
Country | Bulgaria |
External IDs
ORCID | /0000-0001-7436-0103/work/168716648 |
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ORCID | /0000-0002-1236-1300/work/168717348 |
ORCID | /0000-0002-2367-5567/work/168720272 |
ORCID | /0000-0002-6200-4707/work/168720685 |
Keywords
ASJC Scopus subject areas
Keywords
- bistability, fading memory, high frequency, threshold switch, Volatile memristor