The theoretical study performed in this paper demonstrates that the NbO2-Mott memristor considered here could exhibit two distinct steady-state responses when stimulated by a sinusoidal current input of suitable amplitude, provided the input frequency is sufficiently high. By utilizing methods from circuit theory, this work establishes a link between the two possible dynamical regimes observed in this nanodevice, under the assumed simulation settings hereby, and a versatile dynamical phenomenon it exhibits, known as local fading memory. The mechanisms driving local fading memory in the high frequency limit are investigated here analytically. This feature of the NbO2-Mott memristor, revealed through our analyses, if further validated through experimental studies, could further enhance the already established versatility of this device and may be exploited in suitable practical applications.