Different nonvolatile memory concepts are competing for urgently needed low-power, high-speed solutions. Among them, a capacitor-based FeRAM using ferroelectric HfO₂ is reviving the possibilities of FeRAM due to the simple integration possibilities of the material in high aspect ratio capacitor structures, its known properties in semiconductor production, and the lead-free nature of the material. In this chapter, the basic realization of the capacitor-based FeRAM memory cell is summarized. Based on this, the specific aspects of integrating ferroelectric HfO₂, including the electrical field cycling and reliability performance of the device, are discussed. In addition, scaling advantages compared to formerly PZT-based FeRAM and current DRAM devices are examined.