Exciton Diffusion and Halo Effects in Monolayer Semiconductors

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • Marvin Kulig - , University of Regensburg (Author)
  • Jonas Zipfel - , University of Regensburg (Author)
  • Philipp Nagler - , University of Regensburg (Author)
  • Sofia Blanter - , University of Regensburg (Author)
  • Christian Schüller - , University of Regensburg (Author)
  • Tobias Korn - , University of Regensburg (Author)
  • Nicola Paradiso - , University of Regensburg (Author)
  • Mikhail M. Glazov - , RAS - Ioffe Physico Technical Institute (Author)
  • Alexey Chernikov - , University of Regensburg (Author)

Abstract

We directly monitor exciton propagation in freestanding and SiO2-supported WS2 monolayers through spatially and time-resolved microphotoluminescence under ambient conditions. We find a highly nonlinear behavior with characteristic, qualitative changes in the spatial profiles of the exciton emission and an effective diffusion coefficient increasing from 0.3 to more than 30 cm2/s, depending on the injected exciton density. Solving the diffusion equation while accounting for Auger recombination allows us to identify and quantitatively understand the main origin of the increase in the observed diffusion coefficient. At elevated excitation densities, the initial Gaussian distribution of the excitons evolves into long-lived halo shapes with μm-scale diameter, indicating additional memory effects in the exciton dynamics.

Details

Original languageEnglish
Article number207401
JournalPhysical review letters
Volume120
Issue number20
Publication statusPublished - 18 May 2018
Peer-reviewedYes
Externally publishedYes

External IDs

PubMed 29864294

Keywords

ASJC Scopus subject areas