With progressive scaling, conventional doping of nanoscale silicon poses novel challenges such as random dopant fluctuations, dopant deactivation and mobility degradation which impacts the overall device performance [1]. Most importantly, low temperatures freeze-out conventional dopants that hampers the cryogenic operation of devices. An alternative doping technique that effectively overcomes the nanoscale doping problems was predicted for Si by modulation doping where the dopants are relocated from Si to SiO₂ [2]. The spatial isolation between the dopants and the carriers results in high carrier mobilities with a key advantage of operating at low temperatures. In this paper, we study a modulation doped Si channel surrounded by a SiO₂ shell with aluminum oxide monolayers. At the interface of the SiO₂/Al₂O₃ stack, acceptor states are induced that capture electrons from adjacent silicon via tunneling and thereby create a p-region in the Si channel, which corresponds to a modulation doping mechanism [2]. Furthermore, the trapped electrons in the dielectric represent negative fixed charges, Qfix [3]. This technology is interesting to increase the current output for nominally undoped transistors, typically forming Schottky barrier (SB) at their interface [4]. In this work, the influence of modulation doping on the contact properties of Ni-silicide/Si junctions is studied based on temperature dependent IV -characterization down to 158K. The impact of modulation doping to reduce the Schottky barrier height (SBH) is analyzed.