Effects of compressive stress on wave Love waves propagation in a piezoelectric semiconductor ZnO/Diamond: A screening effect
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
The issue of applied stress in hetero-structures is a persistent problem in materials science and technology. Significant efforts have been made from both numerical and experimental points of view to gain a better understanding of how to address this issue in various engineering industrial applications. In this paper, we numerically calculate the effects of compressive stress on Love waves propagation in a pre-stressed piezoelectric semiconductor ZnO/Diamond. The p-type semiconductor is explicitly taken into account, where the concentrations of holes and electrons are p0 = 1 × 1024m−3and n0 = 1 × 1023m−3, respectively. Numerical results show that the phase velocities of Love waves decrease with uniaxial stress equal to -100 MPa. In addition, this uniaxial compressive stress contributes to a decrease in the magnitude of the electric potential and the concentrations of holes and electrons. In the meantime, the “Screening effect” remains similar for both the unstressed and the pre-stressed structures.
Details
Original language | English |
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Article number | 104278 |
Number of pages | 8 |
Journal | Mechanics Research Communications |
Volume | 138 (2024) |
Publication status | Published - 26 Apr 2024 |
Peer-reviewed | Yes |
External IDs
Scopus | 85191511258 |
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Mendeley | a6e1eb41-e226-3d06-91ed-66d1bef59086 |
Keywords
Keywords
- Piezoelectric semiconductor (PSC) material, Compressive stress, Love waves, Screening effect, Dispersion curves