Effects of compressive stress on wave Love waves propagation in a piezoelectric semiconductor ZnO/Diamond: A screening effect

Research output: Contribution to journalResearch articleContributedpeer-review



The issue of applied stress in hetero-structures is a persistent problem in materials science and technology. Significant efforts have been made from both numerical and experimental points of view to gain a better understanding of how to address this issue in various engineering industrial applications. In this paper, we numerically calculate the effects of compressive stress on Love waves propagation in a pre-stressed piezoelectric semiconductor ZnO/Diamond. The p-type semiconductor is explicitly taken into account, where the concentrations of holes and electrons are p0 = 1 × 1024m−3and n0 = 1 × 1023m−3, respectively. Numerical results show that the phase velocities of Love waves decrease with uniaxial stress equal to -100 MPa. In addition, this uniaxial compressive stress contributes to a decrease in the magnitude of the electric potential and the concentrations of holes and electrons. In the meantime, the “Screening effect” remains similar for both the unstressed and the pre-stressed structures.


Original languageEnglish
Article number104278
JournalMechanics Research Communications
Publication statusPublished - 29 Apr 2024

External IDs

Scopus 85191511258
Mendeley a6e1eb41-e226-3d06-91ed-66d1bef59086



  • Piezoelectric semiconductor (PSC) material, Compressive stress, Love waves, Screening effect, Dispersion curves