The issue of applied stress in hetero-structures is a persistent problem in materials science and technology. Significant efforts have been made from both numerical and experimental points of view to gain a better understanding of how to address this issue in various engineering industrial applications. In this paper, we numerically calculate the effects of compressive stress on Love waves propagation in a pre-stressed piezoelectric semiconductor ZnO/Diamond. The p-type semiconductor is explicitly taken into account, where the concentrations of holes and electrons are p₀ = 1 × 10²⁴m⁻³and n₀ = 1 × 10²³m⁻³, respectively. Numerical results show that the phase velocities of Love waves decrease with uniaxial stress equal to -100 MPa. In addition, this uniaxial compressive stress contributes to a decrease in the magnitude of the electric potential and the concentrations of holes and electrons. In the meantime, the “Screening effect” remains similar for both the unstressed and the pre-stressed structures.