EFFECTS OF ANNEALING ON LIFETIME AND DEEP-LEVEL PHOTOLUMINESCENCE IN SEMIINSULATING GALLIUM-ARSENIDE
Research output: Contribution to journal › Research article › Contributed
Contributors
Details
Original language | German |
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Pages (from-to) | 2946-2950 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Issue number | 7 |
Publication status | Published - 1987 |
Peer-reviewed | No |
External IDs
Scopus | 0007695062 |
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