Dislocation-Free SiGe/Si Heterostructures

Research output: Contribution to journalReview articleContributedpeer-review


  • Francesco Montalenti - , University of Milan - Bicocca (Author)
  • Fabrizio Rovaris - , University of Milan - Bicocca (Author)
  • Roberto Bergamaschini - , University of Milan - Bicocca (Author)
  • Leo Miglio - , University of Milan - Bicocca (Author)
  • Marco Salvalaglio - , Technische Universität Dresden (Author)
  • Giovanni Isella - , Polytechnic University of Milan (Author)
  • Fabio Isa - , CSIRO Mfg, Commonwealth Scientific & Industrial Research Organisation (CSIRO) (Author)
  • Hans von Kanel - , Swiss Federal Laboratories for Materials Science and Technology (Empa) (Author)


Ge vertical heterostructures grown on deeply-patterned Si(001) were first obtained in 2012 (C.V. Falub et al., Science2012, 335, 1330-1334), immediately capturing attention due to the appealing possibility of growing micron-sized Ge crystals largely free of thermal stress and hosting dislocations only in a small fraction of their volume. Since then, considerable progress has been made in terms of extending the technique to several other systems, and of developing further strategies to lower the dislocation density. In this review, we shall mainly focus on the latter aspect, discussing in detail 100% dislocation-free, micron-sized vertical heterostructures obtained by exploiting compositional grading in the epitaxial crystals. Furthermore, we shall also analyze the role played by the shape of the pre-patterned substrate in directly influencing the dislocation distribution.


Original languageEnglish
Article number257
Number of pages16
Issue number6
Publication statusPublished - Jun 2018
Externally publishedYes

External IDs

Scopus 85049241068



  • heteroepitaxy, defects, semiconductors, elasticity, plasma-enhanced chemical vapour deposition, AXIAL HETEROSTRUCTURES, GE, SI, LAYERS, NANODIFFRACTION, NANOSTRUCTURES, RELAXATION, DEPOSITION, REDUCTION, DENSITIES