Direct Chip-To-Waveguide Transition Realized with Wire Bonding for 140-220 GHz G-Band

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

Abstract

This work presents a method to realize a direct chip-To-waveguide transition by means of commercial wire-bonding tools. A straight E-field probe is formed by a freely suspended bondwire and mounted to a standard RF pad on-chip. In contrast to conventional approaches, no additional dedicated substrate or large integrated radiating structure are necessary. A preliminary analysis is performed to illustrate the basic feasibility and a WR-05 prototype module, with dedicated test chip, is designed and optimized for a frequency range of 140-220 GHz (G-Band). The measured return loss of a back-To-back configuration is above 10 dB, while the deembedded absolute loss of a single transition is between 0.4 and 1 dB, both within the complete waveguide bandwidth of 80 GHz. The demonstrated performance is very well suited to ultrawideband communication systems or general-purpose mm-wave components.

Details

Original languageEnglish
Article number8984241
Pages (from-to)302-308
Number of pages7
JournalIEEE transactions on terahertz science and technology
Volume10
Issue number3
Publication statusPublished - May 2020
Peer-reviewedYes

Keywords

Keywords

  • Bondwire, G-band, matching, mm-wave, packaging, propagation, transition, waveguide, WR-5