Direct Chip-To-Waveguide Transition Realized with Wire Bonding for 140-220 GHz G-Band
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
This work presents a method to realize a direct chip-To-waveguide transition by means of commercial wire-bonding tools. A straight E-field probe is formed by a freely suspended bondwire and mounted to a standard RF pad on-chip. In contrast to conventional approaches, no additional dedicated substrate or large integrated radiating structure are necessary. A preliminary analysis is performed to illustrate the basic feasibility and a WR-05 prototype module, with dedicated test chip, is designed and optimized for a frequency range of 140-220 GHz (G-Band). The measured return loss of a back-To-back configuration is above 10 dB, while the deembedded absolute loss of a single transition is between 0.4 and 1 dB, both within the complete waveguide bandwidth of 80 GHz. The demonstrated performance is very well suited to ultrawideband communication systems or general-purpose mm-wave components.
Details
Original language | English |
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Article number | 8984241 |
Pages (from-to) | 302-308 |
Number of pages | 7 |
Journal | IEEE transactions on terahertz science and technology |
Volume | 10 |
Issue number | 3 |
Publication status | Published - May 2020 |
Peer-reviewed | Yes |
Keywords
ASJC Scopus subject areas
Keywords
- Bondwire, G-band, matching, mm-wave, packaging, propagation, transition, waveguide, WR-5