Direct Chip-To-Waveguide Transition Realized with Wire Bonding for 140-220 GHz G-Band
Publikation: Beitrag in Fachzeitschrift › Forschungsartikel › Beigetragen › Begutachtung
Beitragende
Abstract
This work presents a method to realize a direct chip-To-waveguide transition by means of commercial wire-bonding tools. A straight E-field probe is formed by a freely suspended bondwire and mounted to a standard RF pad on-chip. In contrast to conventional approaches, no additional dedicated substrate or large integrated radiating structure are necessary. A preliminary analysis is performed to illustrate the basic feasibility and a WR-05 prototype module, with dedicated test chip, is designed and optimized for a frequency range of 140-220 GHz (G-Band). The measured return loss of a back-To-back configuration is above 10 dB, while the deembedded absolute loss of a single transition is between 0.4 and 1 dB, both within the complete waveguide bandwidth of 80 GHz. The demonstrated performance is very well suited to ultrawideband communication systems or general-purpose mm-wave components.
Details
Originalsprache | Englisch |
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Aufsatznummer | 8984241 |
Seiten (von - bis) | 302-308 |
Seitenumfang | 7 |
Fachzeitschrift | IEEE transactions on terahertz science and technology |
Jahrgang | 10 |
Ausgabenummer | 3 |
Publikationsstatus | Veröffentlicht - Mai 2020 |
Peer-Review-Status | Ja |
Schlagworte
ASJC Scopus Sachgebiete
Schlagwörter
- Bondwire, G-band, matching, mm-wave, packaging, propagation, transition, waveguide, WR-5