DC behaviour of a non-volatile memristor: Part II
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Abstract
Adopting the system theoretic tools introduced in part I, this paper gains a deep insight into the fading memory effects emerging in a non-volatile memristor under DC inputs. Experimental evidence for the history erase phenomenon is also provided here.
Details
| Original language | English |
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| Title of host publication | CNNA 2016 - 15th International Workshop on Cellular Nanoscale Networks and Their Applications |
| Editors | Ronald Tetzlaff |
| Publisher | IEEE Computer Society |
| Pages | 57-58 |
| Number of pages | 2 |
| ISBN (electronic) | 9783800742523 |
| Publication status | Published - 2016 |
| Peer-reviewed | Yes |
Publication series
| Series | International Workshop on Cellular Nanoscale Networks and their Applications |
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| Volume | 2016-August |
| ISSN | 2165-0160 |
Conference
| Title | 15th International Workshop on Cellular Nanoscale Networks and Their Applications, CNNA 2016 |
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| Duration | 23 - 25 August 2016 |
| City | Dresden |
| Country | Germany |
External IDs
| ORCID | /0000-0001-7436-0103/work/172566279 |
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