DC behaviour of a non-volatile memristor: Part II
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
Adopting the system theoretic tools introduced in part I, this paper gains a deep insight into the fading memory effects emerging in a non-volatile memristor under DC inputs. Experimental evidence for the history erase phenomenon is also provided here.
Details
| Originalsprache | Englisch |
|---|---|
| Titel | CNNA 2016 - 15th International Workshop on Cellular Nanoscale Networks and Their Applications |
| Redakteure/-innen | Ronald Tetzlaff |
| Herausgeber (Verlag) | IEEE Computer Society |
| Seiten | 57-58 |
| Seitenumfang | 2 |
| ISBN (elektronisch) | 9783800742523 |
| Publikationsstatus | Veröffentlicht - 2016 |
| Peer-Review-Status | Ja |
Publikationsreihe
| Reihe | International Workshop on Cellular Nanoscale Networks and their Applications |
|---|---|
| Band | 2016-August |
| ISSN | 2165-0160 |
Konferenz
| Titel | 15th International Workshop on Cellular Nanoscale Networks and Their Applications, CNNA 2016 |
|---|---|
| Dauer | 23 - 25 August 2016 |
| Stadt | Dresden |
| Land | Deutschland |
Externe IDs
| ORCID | /0000-0001-7436-0103/work/172566279 |
|---|