Contact Properties of Ultrasmall Carbon Nanotube Transistors from Ab-initio
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Abstract
based on large-scale ab-initio calculations contact properties of carbon nanotubes field effect transistors with 9-nm channel were analyzed. We have found that the internal part of the nanotube is metalized, while the uncovered CNT portion is p-doped due to the influence of the metal. Our findings can explain unique scaling of the CNT-FETs based on first-principles.
Details
| Original language | English |
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| Title of host publication | 2014 IEEE 34th International Scientific Conference on Electronics and Nanotechnology (ELNANO) |
| Place of Publication | Kyiv |
| Pages | 110-114 |
| Number of pages | 5 |
| ISBN (electronic) | 978-1-4799-4580-1 |
| Publication status | Published - 2014 |
| Peer-reviewed | Yes |
Publication series
| Series | IEEE International Conference on Electronics and Nanotechnology (ELNANO) |
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External IDs
| Scopus | 84906542817 |
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| ORCID | /0000-0002-6574-7848/work/211720452 |
Keywords
Keywords
- Ab-initio, Carbon nanotube transistor, Contact