Contact Properties of Ultrasmall Carbon Nanotube Transistors from Ab-initio

Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review

Contributors

Abstract

based on large-scale ab-initio calculations contact properties of carbon nanotubes field effect transistors with 9-nm channel were analyzed. We have found that the internal part of the nanotube is metalized, while the uncovered CNT portion is p-doped due to the influence of the metal. Our findings can explain unique scaling of the CNT-FETs based on first-principles.

Details

Original languageEnglish
Title of host publication2014 IEEE 34th International Scientific Conference on Electronics and Nanotechnology (ELNANO)
Place of PublicationKyiv
Pages110-114
Number of pages5
ISBN (electronic)978-1-4799-4580-1
Publication statusPublished - 2014
Peer-reviewedYes

Publication series

SeriesIEEE International Conference on Electronics and Nanotechnology (ELNANO)

External IDs

Scopus 84906542817
ORCID /0000-0002-6574-7848/work/211720452

Keywords

Keywords

  • Ab-initio, Carbon nanotube transistor, Contact