Contact Properties of Ultrasmall Carbon Nanotube Transistors from Ab-initio
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
based on large-scale ab-initio calculations contact properties of carbon nanotubes field effect transistors with 9-nm channel were analyzed. We have found that the internal part of the nanotube is metalized, while the uncovered CNT portion is p-doped due to the influence of the metal. Our findings can explain unique scaling of the CNT-FETs based on first-principles.
Details
| Originalsprache | Englisch |
|---|---|
| Titel | 2014 IEEE 34th International Scientific Conference on Electronics and Nanotechnology (ELNANO) |
| Erscheinungsort | Kyiv |
| Seiten | 110-114 |
| Seitenumfang | 5 |
| ISBN (elektronisch) | 978-1-4799-4580-1 |
| Publikationsstatus | Veröffentlicht - 2014 |
| Peer-Review-Status | Ja |
Publikationsreihe
| Reihe | IEEE International Conference on Electronics and Nanotechnology (ELNANO) |
|---|
Externe IDs
| Scopus | 84906542817 |
|---|---|
| ORCID | /0000-0002-6574-7848/work/211720452 |
Schlagworte
Schlagwörter
- Ab-initio, Carbon nanotube transistor, Contact
Bibliotheksschlagworte
- 620 Ingenieurwissenschaften und zugeordnete Tätigkeiten - Ab-initio, Carbon nanotube transistor, Contact
- 572 Biochemie - Ab-initio, Carbon nanotube transistor, Contact
- 004 Informatik - Ab-initio, Carbon nanotube transistor, Contact