Comparison of IGCT and IGBT for the use in the modular multilevel converter for HVDC applications
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Abstract
This paper describes briefly the modeling of the modular multilevel converter, which was introduced by Rainer Marquardt [1]. The mathematical model is used to calculate the average losses and junction temperature of the semiconductor devices in dependence on the converter output power. The junction temperature, the semiconductor losses and their several components are shown in order to compare a converter with IGCTs and a converter with IGBTs as switches. The comparison is made to show in which operating point the one or the other has its advantages.
Details
| Original language | English |
|---|---|
| Title of host publication | 9th International Multi-Conference on Systems, Signals & Devices |
| Place of Publication | Chemnitz |
| Publisher | Wiley-IEEE Press |
| Number of pages | 6 |
| ISBN (electronic) | 978-1-4673-1589-0, 978-1-4673-1591-3 |
| ISBN (print) | 978-1-4673-1590-6 |
| Publication status | Published - 23 Mar 2012 |
| Peer-reviewed | Yes |
Publication series
| Series | IEEE SSD International Multi-Conference on Systems, Signals and Devices |
|---|---|
| ISSN | 2474-0438 |
Conference
| Title | 9th International Multi-Conference on Systems, Signals & Devices |
|---|---|
| Abbreviated title | IEEE SSD 2012 |
| Duration | 20 - 23 March 2012 |
| Degree of recognition | International event |
| City | Chemnitz |
| Country | Germany |
External IDs
| Scopus | 84861631328 |
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Keywords
Keywords
- Insulated gate bipolar transistors, Junctions, Semiconductor diodes, Switches, Mathematical model, Temperature, Inverters