Comparison of IGCT and IGBT for the use in the modular multilevel converter for HVDC applications
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
This paper describes briefly the modeling of the modular multilevel converter, which was introduced by Rainer Marquardt [1]. The mathematical model is used to calculate the average losses and junction temperature of the semiconductor devices in dependence on the converter output power. The junction temperature, the semiconductor losses and their several components are shown in order to compare a converter with IGCTs and a converter with IGBTs as switches. The comparison is made to show in which operating point the one or the other has its advantages.
Details
| Originalsprache | Englisch |
|---|---|
| Titel | 9th International Multi-Conference on Systems, Signals & Devices |
| Erscheinungsort | Chemnitz |
| Herausgeber (Verlag) | Wiley-IEEE Press |
| Seitenumfang | 6 |
| ISBN (elektronisch) | 978-1-4673-1589-0, 978-1-4673-1591-3 |
| ISBN (Print) | 978-1-4673-1590-6 |
| Publikationsstatus | Veröffentlicht - 23 März 2012 |
| Peer-Review-Status | Ja |
Publikationsreihe
| Reihe | IEEE SSD International Multi-Conference on Systems, Signals and Devices |
|---|---|
| ISSN | 2474-0438 |
Konferenz
| Titel | 9th International Multi-Conference on Systems, Signals & Devices |
|---|---|
| Kurztitel | IEEE SSD 2012 |
| Dauer | 20 - 23 März 2012 |
| Bekanntheitsgrad | Internationale Veranstaltung |
| Stadt | Chemnitz |
| Land | Deutschland |
Externe IDs
| Scopus | 84861631328 |
|---|
Schlagworte
Schlagwörter
- Insulated gate bipolar transistors, Junctions, Semiconductor diodes, Switches, Mathematical model, Temperature, Inverters