Compact Modeling of High Frequency Correlated Noise in HBTs

P. Sakalas; J. Herricht; A. Chakravorty; M. Schroter

doi:10.1109/BIPOL.2006.311175

Compact Modeling of High Frequency Correlated Noise in HBTs

Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review

Contributors

P. Sakalas - , Chair of Electron Devices and Integrated Circuits, Semiconductor Physics Institute Vilnus (Author)
J. Herricht - , Chair of Electron Devices and Integrated Circuits (Author)
A. Chakravorty - , TUD Dresden University of Technology (Author)
M. Schroter - , Chair of Electron Devices and Integrated Circuits, University of California at San Diego (Author)

Abstract

A compact model solution, consistent with the system theory for correlated base and collector shot noise sources, is derived and implemented in the bipolar transistor model HICUM using Verilog-A. Compiled (with Tiburon) Verilog-A model is simulated using ADS 2004A and the results are tested against measured noise parameters for high-frequency (fT at 150 GHz) SiGe HBTs. Very good agreement between simulated and measured data is obtained

Details

Original language	English
Title of host publication	2006 Bipolar/BiCMOS Circuits and Technology Meeting
Publisher	IEEE
Pages	1-4
ISBN (print)	1-4244-0458-4
Publication status	Published - 10 Oct 2006
Peer-reviewed	Yes

Conference

Title	2006 Bipolar/BiCMOS Circuits and Technology Meeting
Duration	8 - 10 October 2006
Location	Maastricht, Netherlands

External IDs

Ieee	10.1109/BIPOL.2006.311175
Scopus	39049103836

Keywords

Frequency, Circuit noise, Integrated circuit noise, Bipolar transistors, Hardware design languages, Circuit simulation, Low-frequency noise, Computational modeling, Silicon germanium, Germanium silicon alloys

Research Portal of the TU Dresden

Contributors

Abstract

Details

Conference

External IDs

Keywords

Keywords