Compact Modeling of High Frequency Correlated Noise in HBTs
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
A compact model solution, consistent with the system theory for correlated base and collector shot noise sources, is derived and implemented in the bipolar transistor model HICUM using Verilog-A. Compiled (with Tiburon) Verilog-A model is simulated using ADS 2004A and the results are tested against measured noise parameters for high-frequency (fT at 150 GHz) SiGe HBTs. Very good agreement between simulated and measured data is obtained
Details
| Originalsprache | Englisch |
|---|---|
| Titel | 2006 Bipolar/BiCMOS Circuits and Technology Meeting |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers (IEEE) |
| Seiten | 1-4 |
| ISBN (Print) | 1-4244-0458-4 |
| Publikationsstatus | Veröffentlicht - 10 Okt. 2006 |
| Peer-Review-Status | Ja |
Konferenz
| Titel | 2006 Bipolar/BiCMOS Circuits and Technology Meeting |
|---|---|
| Dauer | 8 - 10 Oktober 2006 |
| Ort | Maastricht, Netherlands |
Externe IDs
| Ieee | 10.1109/BIPOL.2006.311175 |
|---|---|
| Scopus | 39049103836 |
Schlagworte
Schlagwörter
- Frequency, Circuit noise, Integrated circuit noise, Bipolar transistors, Hardware design languages, Circuit simulation, Low-frequency noise, Computational modeling, Silicon germanium, Germanium silicon alloys