Characterization of a new 4.5 kV press pack SPT+ IGBT for medium voltage converters
Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review
Contributors
Abstract
Recently developed IGBT press pack devices have become a competition for IGCTs in high power industrial applications. This paper presents an overview of state-of-the-art medium voltage power semiconductors with active turn-off capability. A new 85 mm, 4.5 kV, 1.2 kA press pack SPT+ IGBT and the corresponding freewheeling diode are characterized at hard switching as a function of the parameters dc-link voltage, load current, junction temperature, stray inductance and gate unit conditions.
Details
| Original language | German |
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| Title of host publication | 2009 IEEE Energy Conversion Congress and Exposition |
| Publisher | IEEE |
| Pages | 3954-3962 |
| Number of pages | 9 |
| ISBN (print) | 978-1-4244-2893-9 |
| Publication status | Published - 24 Sept 2009 |
| Peer-reviewed | Yes |
Conference
| Title | 2009 IEEE Energy Conversion Congress and Exposition |
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| Duration | 20 - 24 September 2009 |
| Location | San Jose, CA, USA |
External IDs
| Scopus | 72449120785 |
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Keywords
Keywords
- Insulated gate bipolar transistors, Medium voltage, Power electronics, Semiconductor diodes, Power semiconductor switches, Switching converters, Topology, Electronics industry, Temperature, Inductance