Characterization of a new 4.5 kV press pack SPT+ IGBT for medium voltage converters
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
Recently developed IGBT press pack devices have become a competition for IGCTs in high power industrial applications. This paper presents an overview of state-of-the-art medium voltage power semiconductors with active turn-off capability. A new 85 mm, 4.5 kV, 1.2 kA press pack SPT+ IGBT and the corresponding freewheeling diode are characterized at hard switching as a function of the parameters dc-link voltage, load current, junction temperature, stray inductance and gate unit conditions.
Details
| Originalsprache | Deutsch |
|---|---|
| Titel | 2009 IEEE Energy Conversion Congress and Exposition |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers (IEEE) |
| Seiten | 3954-3962 |
| Seitenumfang | 9 |
| ISBN (Print) | 978-1-4244-2893-9 |
| Publikationsstatus | Veröffentlicht - 24 Sept. 2009 |
| Peer-Review-Status | Ja |
Konferenz
| Titel | 2009 IEEE Energy Conversion Congress and Exposition |
|---|---|
| Dauer | 20 - 24 September 2009 |
| Ort | San Jose, CA, USA |
Externe IDs
| Scopus | 72449120785 |
|---|
Schlagworte
Schlagwörter
- Insulated gate bipolar transistors, Medium voltage, Power electronics, Semiconductor diodes, Power semiconductor switches, Switching converters, Topology, Electronics industry, Temperature, Inductance