Characterization of a new 4.5 kV press pack SPT+ IGBT for medium voltage converters
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
Recently developed IGBT press pack devices have become a competition for IGCTs in high power industrial applications. This paper presents an overview of state-of-the-art medium voltage power semiconductors with active turn-off capability. A new 85 mm, 4.5 kV, 1.2 kA press pack SPT+ IGBT and the corresponding freewheeling diode are characterized at hard switching as a function of the parameters dc-link voltage, load current, junction temperature, stray inductance and gate unit conditions.
Details
Originalsprache | Deutsch |
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Titel | 2009 IEEE Energy Conversion Congress and Exposition |
Herausgeber (Verlag) | IEEE |
Seiten | 3954-3962 |
Seitenumfang | 9 |
ISBN (Print) | 978-1-4244-2893-9 |
Publikationsstatus | Veröffentlicht - 24 Sept. 2009 |
Peer-Review-Status | Ja |
Konferenz
Titel | 2009 IEEE Energy Conversion Congress and Exposition |
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Dauer | 20 - 24 September 2009 |
Ort | San Jose, CA, USA |
Externe IDs
Scopus | 72449120785 |
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Schlagworte
Schlagwörter
- Insulated gate bipolar transistors, Medium voltage, Power electronics, Semiconductor diodes, Power semiconductor switches, Switching converters, Topology, Electronics industry, Temperature, Inductance