Characterisation of retention properties of charge-trapping memory cells at low temperatures
Research output: Contribution to journal › Conference article › Contributed › peer-review
Contributors
Abstract
The density of states of deep level centers in silicon oxynitride layer of SONOS memory cells are calculated from temperature dependent retention measurement. The dominating charge loss mechanisms are direct trap-to-band tunneling (TB) and thermally stimulated emission (TE). Retention measurements at low temperatures (80 - 300K) will be dominated by TE from more "shallow" traps with energies below 1eV and by TB. Taking into account both independent and rival processes the density of states could be calculated self consisting. The results are in excellent agreement with elsewhere published data.
Details
Original language | English |
---|---|
Article number | 012026 |
Journal | IOP Conference Series: Materials Science and Engineering |
Volume | 5 |
Publication status | Published - 2009 |
Peer-reviewed | Yes |
Externally published | Yes |
Conference
Title | 5th International EEIGM/AMASE/FORGEMAT Conference on Advanced Materials Research |
---|---|
Duration | 4 - 5 November 2009 |
City | Nancy |
Country | France |
External IDs
ORCID | /0000-0003-3814-0378/work/155840897 |
---|