Built-in bias fields for retention stabilisation in hafnia-based ferroelectric tunnel junctions

Research output: Contribution to journalResearch articleContributedpeer-review


Original languageEnglish
Pages (from-to)1108-1110
Journal Electronics letters : the latest research in electronic engineering and technology
Issue number21
Publication statusPublished - 15 Oct 2020

External IDs

Scopus 85094155398
ORCID /0000-0003-3814-0378/work/142256131



  • zirconium compounds, work function, dielectric polarisation, hafnium compounds, dielectric hysteresis, tunnelling, aluminium compounds, dielectric depolarisation, electric domains, ferroelectricity, symmetric metal electrode structure, built-in bias fields, retention stabilisation, hafnia-based ferroelectric tunnel junctions, double-layered ferroelectric tunnel junctions, ferroelectric hafnium zirconium oxide, memory layer, dielectric aluminium oxide, tunnelling barrier, unscreened polarisation charges, retention behaviour, ferroelectric domains, diminishing memory window, polarisation hysteresis curve, electric depolarisation field, back-switching, titanium nitride, on-current, off-current degradation, HfZrO, AlO