Built-in bias fields for retention stabilisation in hafnia-based ferroelectric tunnel junctions
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
| Original language | English |
|---|---|
| Pages (from-to) | 1108-1110 |
| Journal | Electronics letters : the latest research in electronic engineering and technology |
| Volume | 56 |
| Issue number | 21 |
| Publication status | Published - 15 Oct 2020 |
| Peer-reviewed | Yes |
External IDs
| Scopus | 85094155398 |
|---|---|
| ORCID | /0000-0003-3814-0378/work/142256131 |
Keywords
Keywords
- zirconium compounds, work function, dielectric polarisation, hafnium compounds, dielectric hysteresis, tunnelling, aluminium compounds, dielectric depolarisation, electric domains, ferroelectricity, symmetric metal electrode structure, built-in bias fields, retention stabilisation, hafnia-based ferroelectric tunnel junctions, double-layered ferroelectric tunnel junctions, ferroelectric hafnium zirconium oxide, memory layer, dielectric aluminium oxide, tunnelling barrier, unscreened polarisation charges, retention behaviour, ferroelectric domains, diminishing memory window, polarisation hysteresis curve, electric depolarisation field, back-switching, titanium nitride, on-current, off-current degradation, HfZrO, AlO