Si doped HfO2 based ferroelectric capacitors integrated into Back-End-Of-Line (BEOL) 130 nm CMOS technology were investigated in regard to critical reliability parameters for their implementation in non-volatile one-transistor one-capacitor ferroelectric random-access memory applications. These parameters were electric field, capacitor area, and temperature and they were evaluated on single and parallel structured capacitors in order to understand their impact on wake-up, fatigue, imprint, and retention.