Silicon germanium presents a great opportunity to improve the performance of Schottky barrier transistors through band gap engineering. This work presents a multi-gated reconfigurable transistor built from pure SiGe channel material for bandgap reduction. The device utilizes industrial-grade SiGe-on-insulator wafers, a hysteresis-free HfO₂-based dielectric, and alloyed NiTiGeSi contacts, leading to Fermi-level pinning of the Schottky contact about 200 meV above the valance band. Electron and hole transport in this complex structure have been analyzed as a function of the applied back-bias by electrical measurements and corresponding technology computer-aided design simulation. An on/off ratio of 10³ with on-currents up to 3.15 µA can be achieved for the p-mode. At the same bias, the n-mode showed no influence of the top gates due to a dominant parasitic hole current path. A strong positive back-bias induced an n-type switching operation, resulting in similar on/off-ratio and subthreshold slopes as achieved with the p-type mode. Opposed to this, it is shown that a strong negative back-bias leads to a loss of gate control over the p-mode, inducing an always-on behavior. The results will give guidelines for applying Schottky barrier devices in industrial SiGe technologies, e.g., for reconfigurable or cryogenic computing.