Assessment of Back-End-of-Line Compatibility of Sputtered HfO2-Based Ferroelectrics

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

Abstract

The thermal compatibility of fully sputtered, ferroelectric TiN/Hf xZr (1−x)O 2/TiN thin-film capacitors with back-end-of-line processing is investigated. The sputtering power, ZrO 2 concentration, and annealing temperature affect the crystal structure and ferroelectric properties of Hf xZr (1−x)O 2 (HZO) in different ways, which is revealed by the grazing incidence X-ray diffraction and electric characterization. Moderate sputtering power and ZrO 2 content favor the orthorhombic phase and higher remanent polarization. In contrast, low and high power or low and high ZrO 2 concentrations increase the monoclinic and tetragonal/cubic phase fractions, respectively. For the first time, it is shown that annealing at 400 °C for 1 h can result in fully crystalline HZO films deposited by physical vapor deposition. Even pure HfO 2 deposited from a 3 in. target with a sputtering power of 50 W exhibits some ferroelectric response after annealing at 400 °C and wakeup cycling.

Details

Original languageEnglish
Article number2100572
JournalPhysica Status Solidi - Rapid Research Letters
Volume16
Issue number10
Early online date27 Jan 2022
Publication statusPublished - Oct 2022
Peer-reviewedYes

External IDs

Scopus 85123792653
Mendeley 6a391f13-1d28-371e-8b3f-079d9acf22a8
ORCID /0000-0003-3814-0378/work/142256143

Keywords

Keywords

  • BEOL, ferroelectrics, hafnia, HZO, sputtering

Library keywords