Analysis of the Annealing Budget of Metal Oxide Thin-Film Transistors Prepared by an Aqueous Blade-Coating Process

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Metal oxide (MO) semiconductors are widely used in electronic devices due to their high optical transmittance and promising electrical performance. This work describes the advancement toward an eco-friendly, streamlined method for preparing thin-film transistors (TFTs) via a pure water-solution blade-coating process with focus on a low thermal budget. Low temperature and rapid annealing of triple-coated indium oxide thin-film transistors (3C-TFTs) and indium oxide/zinc oxide/indium oxide thin-film transistors (IZI-TFTs) on a 300 nm SiO2 gate dielectric at 300 °C for only 60 s yields devices with an average field effect mobility of 10.7 and 13.8 cm2 V−1 s−1, respectively. The devices show an excellent on/off ratio (>106), and a threshold voltage close to 0 V when measured in air. Flexible MO-TFTs on polyimide substrates with AlOx dielectrics fabricated by rapid annealing treatment can achieve a remarkable mobility of over 10 cm2 V−1 s−1 at low operating voltage. When using a longer post-coating annealing period of 20 min, high-performance 3C-TFTs (over 18 cm2 V−1 s−1) and IZI-TFTs (over 38 cm2 V−1 s−1) using MO semiconductor layers annealed at 300 °C are achieved.


Original languageEnglish
Article number2207966
Number of pages16
JournalAdvanced functional materials
Issue number8
Publication statusPublished - 16 Feb 2023

External IDs

WOS 000897755300001
ORCID /0000-0002-8487-0972/work/142247553
ORCID /0000-0002-4859-4325/work/142253325
ORCID /0000-0002-4112-6991/work/142254777


Subject groups, research areas, subject areas according to Destatis


  • blade-coating, green solvents, metal oxide thin-film transistors, rapid annealing, solution processes, Green solvents, Blade-coating, Metal oxide thin-film transistors, Rapid annealing, Solution processes