A voltage-reference-free pulse density modulation (VRF-PDM) 1-V input switched-capacitor 1/2 voltage converter with output voltage trimming by hot carrier injection and periodic activation scheme
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Abstract
A 1-V input, 0.45-V output switched-capacitor (SC) 2:1 voltage converter is developed in 65-nm CMOS. A proposed voltage-reference-free pulse density modulation (VRF-PDM) increased the efficiency from 17% to 73% at 50-μA output current by reducing the pulse density and eliminating the voltage reference circuit. An output voltage trimming by the hot carrier injection to a comparator and a periodic activation scheme of the SC converter are also proposed to solve the problems attributed to VRF-PDM.
Details
Original language | English |
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Title of host publication | 2011 Symposium on VLSI Circuits - Digest of Technical Papers |
Publisher | IEEE |
Pages | 280-281 |
Number of pages | 2 |
ISBN (print) | 978-4-86348-166-4 |
Publication status | Published - 17 Jun 2011 |
Peer-reviewed | Yes |
Conference
Title | 2011 Symposium on VLSI Circuits - Digest of Technical Papers |
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Duration | 15 - 17 June 2011 |
Location | Kyoto, Japan |
External IDs
Scopus | 80052669888 |
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ORCID | /0000-0002-4152-1203/work/165453416 |
Keywords
Keywords
- Human computer interaction, Voltage measurement, Modulation, Switches, Pulse measurements, Density measurement, Hot carrier injection